Curated News
By: NewsRamp Editorial Staff
October 14, 2025
BeSang Breaks DRAM Scaling Barrier with TRUE 4F2 Technology
TLDR
- BeSang's TRUE 4F2 DRAM breakthrough gives companies a cost and performance advantage over competitors still using limited 6F2 DRAM technology.
- BeSang's proprietary TRUE 4F2 DRAM technology achieves higher density by overcoming structural barriers that previously prevented practical 4F2 cell implementation.
- This memory advancement enables more powerful AI systems and computing devices that can solve complex problems and improve daily technology experiences for everyone.
- BeSang turned the semiconductor industry's long-standing 4F2 DRAM myth into reality, achieving what was considered impossible for decades.
Impact - Why it Matters
This breakthrough matters because it represents a fundamental shift in memory technology that could accelerate computing performance across multiple sectors. For consumers, this means faster devices, more efficient AI processing, and potentially lower costs for high-performance computing. For the tech industry, it reduces reliance on expensive high-bandwidth memory stacks while enabling new levels of system performance. The ability to create denser, more efficient memory chips addresses one of the biggest bottlenecks in modern computing, particularly for AI and data-intensive applications. This advancement could accelerate innovation in everything from smartphones to data centers, making advanced computing capabilities more accessible and affordable.
Summary
BeSang has achieved a semiconductor industry breakthrough with the introduction of TRUE 4F2 DRAM, overcoming what were previously considered insurmountable scaling limitations of conventional 6F2 DRAM. For decades, 4F2 DRAM has been viewed as an industry goal but never a market reality due to technical barriers in structure and processing that resulted in cells much larger than the desired 4F2 size. The company's proprietary TRUE 4F2 DRAM technology now delivers an effective 4F2 cell, unlocking unprecedented levels of density, efficiency, speed, and cost savings that could fundamentally reshape memory technology.
According to Chris Lee, Chief Operating Officer of BeSang, this technology defies the 6F2 DRAM cell scaling limitation and provides incredible low-cost solutions for stand-alone DRAM products. The innovation also offers ultra high-density embedded L3 cache memory solutions for GPU/CPU/AP applications, which could drastically boost system performance while reducing dependence on high-stack HBM for AI applications. The technology's versatility supports traditional 2D ICs, monolithic 3D ICs, and package level 3D ICs, enabling both standalone and embedded applications across various computing platforms. As the world's leading 3D IC technology company, BeSang continues to develop next-generation 3D IC solutions based on monolithic and hybrid bonding methods, with their goal being to defy the scaling, application, and performance limitations of ultra-high-density integrated circuits. For more information, interested parties can visit www.besang.com to learn about this groundbreaking development.
Source Statement
This curated news summary relied on content disributed by 24-7 Press Release. Read the original source here, BeSang Breaks DRAM Scaling Barrier with TRUE 4F2 Technology
