PORTLAND, OR, October 14, 2025 /24-7PressRelease/ -- BeSang today announced a breakthrough with the introduction of TRUE 4F2 DRAM, overcoming the scaling limits of conventional 6F2 DRAM.

For decades, 4F2 DRAM has been viewed as an industry goal but never a market reality. Technical barriers in structure and processing meant that proposed designs often resulted in cells much larger than the desired 4F2 size.

BeSang has now achieved what was once thought improbable. Its proprietary TRUE 4F2 DRAM technology delivers an effective 4F2 cell, unlocking new levels of density, efficiency, speed, and cost savings.

"4F2 DRAM has been considered hype and myth in the industry for long time. Unfortunately, there has not yet been a practical solution for 4F2 DRAM technology," said Chris Lee, Chief Operating Officer of BeSang. "We expect that BeSang's proprietary TRUE 4F2 DRAM technologies will defy the 6F2 DRAM cell scaling limitation and be incredible low-cost solutions for stand-alone DRAM products. They would also provide ultra high-density embedded L3 cache memories solution for GPU/CPU/AP applications to boost system performance drastically and reduce dependance on high-stack HBM for AI."

TRUE 4F2 DRAM is designed for versatility. It supports traditional 2D ICs, monolithic 3D ICs, and package level 3D ICs, enabling both stand alone and embedded applications.

With TRUE 4F2 DRAM, BeSang sets a new standard for cost-efficient, high-density, high-performance memory, signaling a transformative leap forward for the semiconductor industry.

BeSang Inc. is the world's leading 3D IC technology company which successfully implements true 3D monolithic integration technology in the semiconductor industry, and continuously develops next-generation 3D IC solutions based on monolithic and hybrid bonding methods. Our goal is to defy the scaling, application, and performance limitations of ultra-high-density integrated circuits.

For more information, please visit www.besang.com.

This contant was orignally distributed by 24-7 Press Release. Blockchain Registration, Verification & Enhancement provided by NewsRamp™. The source URL for this press release is BeSang Announces breakthrough TRUE 4F2 DRAM Technologies.