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BeSang Breaks DRAM Scaling Barrier with TRUE 4F2 Technology

BeSang announces TRUE 4F2 DRAM breakthrough, overcoming 6F2 scaling limits. New technology enables higher density, efficiency & cost savings for AI and computing applications.

This breakthrough matters because it represents a fundamental shift in memory technology that could accelerate computing performance across multiple sectors. For consumers, this means faster devices, more efficient AI processing, and potentially lower costs for high-performance computing. For the tech industry, it reduces reliance on expensive high-bandwidth memory stacks while enabling new levels of system performance. The ability to create denser, more efficient memory chips addresses one of the biggest bottlenecks in modern computing, particularly for AI and data-intensive applications. This advancement could accelerate innovation in everything from smartphones to data centers, making advanced computing capabilities more accessible and affordable.